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| BSM 400 GB 60 DN2 IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate Type BSM 400 GB 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE 600V IC 475A Package HALF-BRIDGE 2 Ordering Code C67070-A2120-A67 Symbol Values 600 600 Unit V VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 475 400 TC = 25 C TC = 60 C Pulsed collector current, tp = 1 ms ICpuls 950 800 TC = 25 C TC = 60 C Power dissipation per IGBT Ptot 1400 W + 150 -40 ... + 125 0.09 0.18 2500 20 11 F 40 / 125 / 56 sec Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Apr-25-1997 BSM 400 GB 60 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 6.5 V VGE = VCE, IC = 9 mA Collector-emitter saturation voltage VCE(sat) VGE = 15 V IC = 400 A Tj = 25 C Tj = 125 C Zero gate voltage collector current 2.1 2.2 5 25 2.55 2.65 mA A 1 ICES VCE = 600 V, VGE = 0 V, Tj = 25 C VCE = 600 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 100 22 2.5 1.5 - S nF - VCE = 20 V, IC = 400 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Apr-25-1997 BSM 400 GB 60 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 200 - ns VCC = 300 V, VGE = 15 V, IC = 400 A RGon = 4.7 Rise time tr 190 - VCC = 300 V, VGE = 15 V, IC = 400 A RGon = 4.7 Turn-off delay time td(off) 680 - VCC = 300 V, VGE = -15 V, IC = 400 A RGoff = 4.7 Fall time tf 510 - VCC = 300 V, VGE = -15 V, IC = 400 A RGoff = 4.7 Free-Wheel Diode Diode forward voltage VF 1.9 1.7 2.4 - V IF = 400 A, VGE = 0 V, Tj = 25 C IF = 400 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr 170 - ns IF = 400 A, VR = -300 V, VGE = 0 V diF/dt = -2000 A/s, Tj = 125 C Reverse recovery charge Qrr 15 - C IF = 400 A, VR = -300 V, VGE = 0 V diF/dt = -2000 A/s, Tj = 125 C Semiconductor Group 3 Apr-25-1997 BSM 400 GB 60 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C 1500 W 1300 Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 4 A Ptot 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 IC 10 3 tp = 60.0s 100 s 10 2 1 ms 10 1 10 ms DC 10 20 40 60 80 100 120 C 160 0 10 0 10 1 10 2 V 10 3 TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 500 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 K/W 10 -1 IGBT IC 400 350 300 250 200 150 100 50 0 0 ZthJC 10 -2 D = 0.50 10 -3 0.20 0.10 0.05 10 -4 0.02 single pulse 0.01 20 40 60 80 100 120 C 160 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Semiconductor Group 4 Apr-25-1997 BSM 400 GB 60 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 250 s, Tj = 25 C 800 IC = f (VCE) parameter: tp = 250 s, Tj = 125 C 800 A IC 600 17V 15V 13V 11V 9V 7V A IC 600 17V 15V 13V 11V 9V 7V 500 500 400 400 300 300 200 200 100 0 0 100 0 0 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 250 s, VCE = 20 V 800 A IC 600 500 400 300 200 100 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Apr-25-1997 BSM 400 GB 60 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 400 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 nF VGE 16 14 12 10 C Ciss 10 1 100 V 300 V Coss 8 10 0 6 4 2 0 0.0 10 -1 0 Crss 0.4 0.8 1.2 1.6 2.0 2.4 C 3.2 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 25 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 allowed numbers of short circuit: <1000 time between short 2 circuit: >1s di/dt = 500A/s 1500A/s 2500A/s 0.5 0.0 0 100 200 300 400 500 600 V 800 VCE 0 0 100 200 300 400 500 600 V 800 VCE Semiconductor Group 6 Apr-25-1997 BSM 400 GB 60 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 4.7 10 4 t = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, IC = 400 A 10 4 ns t 10 3 tdoff tf tr tdon 10 2 t ns tdoff 10 3 tf tr tdon 10 2 10 1 0 200 400 600 A 1000 10 1 0 10 IC 30 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 4.7 120 Eoff mWs E E = f (RG) , inductive load , Tj = 125C par.: VCE = 300V, VGE = 15 V, IC = 400 A 120 mWs E 80 80 60 60 Eoff Eon 40 Eon 20 40 20 0 0 200 400 600 A 1000 0 0 10 IC 30 RG Semiconductor Group 7 Apr-25-1997 BSM 400 GB 60 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 800 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 Diode A K/W IF 600 ZthJC 10 -1 500 10 -2 D = 0.50 400 Tj=125C 300 0.20 0.10 200 Tj=25C 10 -3 single pulse 0.05 0.02 0.01 100 0 0.0 10 -4 -5 10 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 8 Apr-25-1997 BSM 400 GB 60 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 9 Apr-25-1997 |
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